Circuit Design for Reliability

This e-book provides actual knowing, modeling and simulation, on-chip characterization, structure suggestions, and layout innovations which are potent to augment the reliability of assorted circuit devices. The authors offer readers with thoughts for state-of-the-art and destiny applied sciences, starting from expertise modeling, fault detection and research, circuit hardening, and reliability administration.

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In our analysis we have found that it is not only the total number of atoms within the discrete doping region that matters, but the location of these atoms plays very important role. Illustrated in Fig. 3, are the potential profiles and the current stream lines for two impurity distributions. Note that the significant current crowding in the upper panel near the critical source end of the channel leads to smaller drain current for VD D 50 mV and a range of VG values. This, in turn, results in larger threshold voltage for this device.

In this case the average number of traps in Eq. 26) becomes a function of time, . If the number 3 Charge Trapping Phenomena in MOSFETS: From Noise to Bias. . 41 Fig. 13 The full line depicts the evolution of the density of occupied traps obtained by numerical integration of Eq. 31). The points correspond to Monte Carlo simulations performed under the same conditions or traps increases with time during the stress phase, the evolution of number of occupied traps may become faster than log(t) as time evolves, as experimentally observed in many works, where the time dependence is found to follow a power law for long stress times [20, 21].

31 102 101 100 10−1 S(f) 10−2 10−3 10−4 10−5 10−6 10−7 10−2 10−1 100 101 102 103 104 105 106 f(Hz) Fig. 8 If the corner frequencies of the Lorentzians (red lines) corresponding to different traps are equally spaced on a log scale, the summation of the power spectrum due to all traps leads to 1/f noise (blue line) of the period T in which the device is in the on state. The capture and emission time constants of a trap are affected by the Fermi level. 16) with Eon ; Eoff ; ˛ D ˛/ e Eoff =kB T ˛/ e Eoff =kB T 32 G.

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