Electrochemistry of semiconductors and electronics processes by John Dr McHardy, Frank Haber, John Dr McHardy, Frank Haber

By John Dr McHardy, Frank Haber, John Dr McHardy, Frank Haber

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T GHz E, vs. , where predictable and constant capacitance is required. Ferroelectrics are better for high-capacitance applications (operating at low frequencies) such as energy storage where tight-tolerance and stability is not as important as long as a minimum amount of capacitance is provided. Currently, ferroelectric 24 Thin-Film Capacitors for Packaged Electronics materials are widely used in DRAM memory cells [24, 36]. Although multilayer dielectric structures using different dielectrics are being explored to achieve high capacitance densities, their processing is not cost-effective [34].

Bias no dependence decreases with de bias no dependence highly dependent due to thickness dependent crystal structures Dielectr ic fatigue none K e, vs. film structure little or no dependence must be crystalline to exhibit high dielectric cosntant Cure requirements none 500 - 700 °C (typically in 02) s, vs. T GHz E, vs. , where predictable and constant capacitance is required. Ferroelectrics are better for high-capacitance applications (operating at low frequencies) such as energy storage where tight-tolerance and stability is not as important as long as a minimum amount of capacitance is provided.

Packag. 25,454 (2002). P. lain, 1. Y. Kim, Y. Xiao , R. Natarajan, E. 1. J. Gutmann, and T. P. Chow, in Proc. of CPES annual review, Blacksburg, VA, 2000 , pp. 155-158 . P. R. Tummala, G. Allen , and M. Swami nathan , IEEE Trans. , Manufact. Technol. B. 21, 184 (1998) . K. Y. Chen , W. D. Brown , L. W. Schaper, S. S. Ang, and H. A. Naseem, IEEE Trans . Adv. 23, 293 (2000) . 1. Dougherty, 1. Galvagni, L. Marcanti, P. Sandborn, R. Charbonneau, and R. Sheffield, in online Proc. pdf 1. D. Plummer, M.

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