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Additional info for InP DHBT-based Clock and Data Recovery Circuits for Ultra-High-Speed Optical Data Links
Therefore, the corresponding dimensions should be as small as possible. The lower limit of the latter dimensions is determined by 34 3. InP-DHBT Technology the process technology with respect to high device yield and process reliability. Thus, LB and SBE amount to 2 μm and 1 μm, respectively. Collector dimensions The collector dimensions SBC , WC , and LC are set in such a way that the corresponding extrinsic collector resistance RC is minimized. A small RC minimizes the collector charging time τsc , thus resulting in high fT values (cf.
Beginning with a brief description of the basic operation of the (D)HBT, the structure of each layer forming the diﬀerent parts of the used DHBTs is presented. The third part of this chapter deals with the device geometrical layout. Subsequently, the fabrication process of the DHBTs is addressed. The resulting dc and high-frequency performance of the devices is then discussed. In the sixth part of this chapter, transistor models describing the small-signal and large-signal behavior of the processed DHBTs are introduced.
13 is valid. The actual transistor equivalent model is within the boundary. The components out of the boundary represent the parasitic capacitances between the transistor ports, the parasitic inductances and the contact resistances at the transistor ports. The small-signal equivalent circuit uses a T-topology. An advantage of this topology is its direct correlation with the physic architecture of the device. 2. As for the large-signal model presented before, the extraction methods of the small-signal parameters are discussed in details in .