By Kevin F. Brennan
This quantity deals a high-quality starting place for realizing an important units utilized in the most well liked components of digital engineering this present day, from semiconductor basics to cutting-edge semiconductor units within the telecommunications and computing industries. Kevin Brennan describes destiny ways to computing and RF energy amplifiers, and explains how rising developments and procedure calls for of computing and telecommunications structures impact the alternative, layout, and operation of semiconductor units. moreover, he covers MODFETs and MOSFETs, brief channel results, and the demanding situations confronted via carrying on with miniaturization. His publication is either a superb senior/graduate textual content and a precious reference for training engineers and researchers.
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Extra resources for Introduction to Semiconductor Devices: For Computing and Telecommunications Applications
Example text
Setting the zero of potential energy at Ev , then qVbi can be determined from inspection of Fig. 1) in a different form using the expressions for the electron and hole concentrations from Chapter 1. 3 p–n homojunction: (a) doping scheme; (b) potential diagram; (c) energy band diagram. W is the width of the depletion region. 4 p- and n-type material drawn apart prior to contact. The built-in potential is simply equal to the difference between the Fermi levels on either side of the junction. The Fermi levels align when put into contact.
In (a) the material is n-type since the Fermi level lies above the intrinsic level. In (b) the material is p-type since the Fermi level lies below the intrinsic level. Since the donor doping concentration is very much larger than the intrinsic concentration, using the approximation that the electron concentration is equal to the donor concentration is valid. 417 eV By evaluating Ei , the position of the intrinsic level relative to the valence band can be determined. 10 Energy band diagram as a function of position.
0259 eV. 50 times the free electron mass respectively. 5 × 107 cm−3 . 2 Carrier action In this chapter we examine the dynamics of carriers in semiconductors. We consider three general types of dynamics: drift, diffusion, and generation–recombination. In the first section, we discuss both drift and diffusion, which govern electron transport dynamics in semiconductors. The next section is devoted to the study of generation– recombination mechanisms active in semiconductors. Finally, we conclude with a discussion of the carrier continuity equation and its solution.