By J K Hirvonen

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0Si. Other measurements have been made of the composition depth profiles of PtSi samples sputtered with Ar at energies of 10, 20, and 40 keV. For each energy, a sufficiently high Ar dose had been used such that the Pt enrichment reached steady state. The depth of Pt enrichment was found 29 ION BOMBARDMENT EFFECTS ON MATERIAL COMPOSITION 600 800 1000 1200 DEPTH (A) Fig. 8. Depth profiles of Pt-Si concentration ratio for 80-keV Ar2+ sputtered PtSi samples. 56 x 1017 cm"2. ) to be related to the Ar energy.

Equation (4) gives the value of the surface composition ratio Npt/Nsi, x, as a function of ion dose Φ. The values are plotted in Fig. 9 using the experimentally measured values of W, 5, and r. There is good agreement between the calculated and measured dose dependence. There are some other interesting relations that can be obtained from the model. For example, one can define a quantity Φ 0 as shown in Fig. 9. This is the intersection of the initial slope of the x( Φ) curve with the 34 Z. L. LIAU AND J.

14. The steadystate compositions are the same as predicted by Eq. e. NA/NB = r(S - 1)_1. Note that for r = 2, it takes about twice as much sputtering to reach the steady-state composition. This can also be seen by the following derivation: Define Φο ; *(°°) (αχ/άΦΑ)\φΑ=ο (19) which is a measure of the dose required to reach steady state. (See dashed lines in Fig. 00 2 3 4 5 SPUTTERED THICKNESS/W Fig. 14. Buildup of implanted concentration calculated from the simple model of Fig. 13. To illustrate the effects, examples with S = 20 and r = 1 or 2 are considered.