Large Area and Flexible Electronics by Mario Caironi, Yong-Young Noh

By Mario Caironi, Yong-Young Noh

From fabrics to functions, this prepared reference covers the complete price chain from basics through processing correct as much as units, providing varied ways to large-area electronics, therefore allowing readers to match fabrics, houses and function. Divided into elements, the 1st makes a speciality of the fabrics used for the digital performance, overlaying natural and inorganic semiconductors, together with vacuum and solution-processed metal-oxide semiconductors, nanomembranes and nanocrystals, in addition to conductors and insulators. the second one half stories the units and purposes of large-area electronics, together with versatile and ultra-high-resolution monitors, light-emitting transistors, natural and inorganic photovoltaics, large-area imagers and sensors, non-volatile stories and radio-frequency identity tags. With its educational and business viewpoints, this quantity offers in-depth wisdom for knowledgeable researchers whereas additionally serving as a first-stop source for these coming into the sector.

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8) incorporating a fused thiazolothiazole ring in the backbone. 3 cm2 V−1 s−1 with high current on/off ratios of ∼106 . The use of thiazolothiazole-fused ring ensures a very rigid and coplanar backbone and thereby highly extended π-electron conjugation and strong π stacking. The electron-deficient nature of the thiazolothiazole affords high oxidative stability. However, the uneven placement of the alkyl side chains along the backbone reduced interdigitation and promoted amorphous-like π stacking and π connectivity along the chain while enhancing solubility.

3 cm2 V−1 s−1 [83]. It was shown that the molecular weight played a key role in improving hole mobilities due to the enhanced thin-film crystallinity, even though the film morphology did not change. 14). 14 Local packing and organization of donor–acceptor groups in P64 with Mn = 35 kDa. 0 kHz. (b) Color scheme used for assignments. (c) Expansion of the backbone region (dashed box in panel a) showing 5 ppm Heterogeneous packing R R R R N 6 n N Bottom layer π–π stacking 7 R = C16 (c) 1H single quantum S (b) N S N S N N S S S S S S S S N R R R R N S S R R 1 1H–1H ppm −2 0 2 4 6 8 10 12 14 16 N S N R R Top layer the contacts between donor and acceptor groups.

In OFET devices, all these materials exhibit p-channel transport, and the hole mobilities are strongly dependent on the material purity, film morphology, deposition conditions, and the degree of film texturing [92]. Usually, larger cores afford greater mobilities when the devices are fabricated and measured under identical conditions [93]. 08 cm2 V−1 s−1 , respectively [94]. The low field-effect mobility for α4T was attributed to the poor charge injection from the contact and not to the inefficient charge transport through the material.

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