Dielectric Materials and Devices by K. M. Nair, A. S. Bhalla, Tapan K. Gupta, Shin-Ichi Hirano,

By K. M. Nair, A. S. Bhalla, Tapan K. Gupta, Shin-Ichi Hirano, Basavaraj V. Hiremath

This distinctive stand by myself quantity info new advancements in dielectric ceramics. It presents complete reports of recent fabrics and product options and comprises issues similar to fabrics synthesis and processing, relaxors & novel compositions, dielectric loss mechanisms, multiplayer ceramic units, and price research of tomorrow’s electrical units. a desirable new quantity that offers serious details for these eager about dielectrics. Papers offered on the 102nd Annual assembly of the yank Ceramic Society, St. Louis, Missouri, united states (2000).

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Dielectric Materials and Devices

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Since the peak positions of the PZT(002) in film(a) and the broad peak(002) in buffer layer(b) are very close, the real position of the PZT(002) peak in film(a) was determined by subtracting the film(b) profile from the film(a) profile.

They include (i) the idea of a critical size for ferroelectricity arising from factors such as depolarization effects and the absence of long-range cooperative interactions and (ii) particularly for chemically prepared BaTi03 powders, the presence of a high concentration of charged point defects that might upset the long range polar ordering that drives the cubic to tetragonal structural transformation on cooling. For hydrothermal BaTi03 powders (particle size -200 nm) prepared from acetate precursors, Hennings and Schreinemacher [ 111 showed that the development of room-temperature tetragonal structure after heat treatment 36 Dielectric Materials and Devices was closely associated with the elimination of hydroxyl defects in the structure and not with particle growth.

At the highest synthesis temperature (240 "C for 96 h), the particles consisted of a mixture of the cubic and tetragonal phases with a bimodal distribution of sizes. The powders showed little weight loss when heated at temperatures between 100 "C and 600 "C. The influence of particle size and processing related hydroxyl defects on the crystal structure of BaTi03 is discussed. - INTRODUCTION Barium titanate is an important material in the electronics industry [ 1-31. Its high dielectric constant and low dielectric loss factor over a wide range of temperature and frequency make it desirable as a dielectric material for the manufacture of capacitors while its ferroelectric properties are exploited for applications such as piezolectric transducers.

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