By H. Iwai, Y. Nishi, M. S. Shur, H. Wong
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Gallon et al, "New magnetoresistance method for mobility extraction in scaled fullydepleted SOI devices", IEEE Int. , Charleston, USA (2004). 24. J. Pretet, T. Matsumoto, T. Poiroux, S. Cristoloveanu, R. Gwoziecki, C. Raynaud, A. Roveda, and H. Brut, "New mechanism of body charging in partially depleted SOIMOSFETs with ultra-thin gate oxide", Proc. ESSDERC'02, Univ. of Bologna, 2002, pp. 515-518. 25. A. M. Rafi, E. Simoen, E. Augendre, and C. Claeys, "Linear kink effect induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs", IEEE Trans.
Iwai, "Alter- 30 S. Cristoloveanu et al. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. native dielectrics for advanced SOI MOSFETs: thermal properties and short channel effects", IEEE Int. , Charleston, USA (2004). D. Esseni, M. K. Celler, C. Fiegna, and E. Sangiorgi, "An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode", IEEE Trans. Electron Devices, vol. 50, no. 3 (2003) 802-808. R. Cirba, S. D. C. M. F. Galloway, "Total-dose radiation hardness of double-gate ultra-thin SOI MOSFETs", Silicon-on-Insulator Technology and Devices XI, Electrochem.
Celler, C. Fiegna, and E. Sangiorgi, "An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode", IEEE Trans. Electron Devices, vol. 50, no. 3 (2003) 802-808. R. Cirba, S. D. C. M. F. Galloway, "Total-dose radiation hardness of double-gate ultra-thin SOI MOSFETs", Silicon-on-Insulator Technology and Devices XI, Electrochem. Soc. Proc. vol. 200305, Pennington, USA (2003) pp. 493-498. D. Hisamoto, W-C. Lee, J. Kedzierski, E. Anderson, H. Takeuchi, K. Asano, T-J.