By J.G. Holbrook
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Additional info for Laplace Transforms for Electronic Engineers
In our analysis we have found that it is not only the total number of atoms within the discrete doping region that matters, but the location of these atoms plays very important role. Illustrated in Fig. 3, are the potential profiles and the current stream lines for two impurity distributions. Note that the significant current crowding in the upper panel near the critical source end of the channel leads to smaller drain current for VD D 50 mV and a range of VG values. This, in turn, results in larger threshold voltage for this device.
In this case the average number of traps
31 102 101 100 10−1 S(f) 10−2 10−3 10−4 10−5 10−6 10−7 10−2 10−1 100 101 102 103 104 105 106 f(Hz) Fig. 8 If the corner frequencies of the Lorentzians (red lines) corresponding to different traps are equally spaced on a log scale, the summation of the power spectrum due to all traps leads to 1/f noise (blue line) of the period T in which the device is in the on state. The capture and emission time constants of a trap are affected by the Fermi level. 16) with Eon ; Eoff ; ˛ D ˛/ e Eoff =kB T ˛/ e Eoff =kB T 32 G.