Optoelectronic Devices: Design, Modeling, and Simulation by Xun Li

By Xun Li

With a transparent program concentration, this publication explores optoelectronic equipment layout and modeling via physics types and systematic numerical research. through acquiring recommendations without delay from the physics-based governing equations via numerical innovations, the writer indicates easy methods to increase new units and the way to reinforce the functionality of present units. Semiconductor-based optoelectronic units reminiscent of semiconductor laser diodes, electroabsorption modulators, semiconductor optical amplifiers, superluminescent gentle emitting diodes and their integrations are all lined. together with step by step useful layout and simulation examples including designated numerical algorithms, this ebook offers researchers, machine designers and graduate scholars in optoelectronics with the numerical recommendations to acquire strategies for his or her personal buildings.

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Therefore, these terms can be viewed as constants and taken out of the integrals. 120) as (ωl − ωk )T /2 → ∞. 118). Actually, this result is very similar to the phase matching condition. Because of our pre-assumption, there is no 40 Optoelectronic Devices: Design, Modeling, and Simulation overlap of base-bands from different wavelength channels in the frequency domain. Therefore, there is no interference between different channels in the time domain in an average sense, because of the rapid phase change in time given by e j ωt , with ω indicating the channel frequency difference.

124), v l (r ) (l ∈ L) forms a complete and orthogonal set that can be used as a base to expand any continuous function. 125a) u(r , t) = L Ul (t)v l (r )d l . 125b) to expand our solution. 125a) will be used throughout. 125b) is used. 126) with m ∈ L, and gV lm (t) ≡ j k0 n sm (t) ≡ − (r ω0 ) v m (r ) dχVdV V (t)v l (r )d r v 2m (r)d r v m (r ) ∂t∂ J sp d r je jω0 t √ µ0 2nω0 ε0 v 2m (r)d r , . 130) and with in the above integrals defined as the entire space in which the optical field spreads.

66) 2 2 where again vg ≡ c/ng ≈ cneff /n2 and neff ≈ n are assumed. 66) governs the envelope function of the optical wave propagating along +z. 66) because of the material bidirectional symmetry along ±z. 57) and s b (x, z, t) = s f (x, −z, t), respectively. 55) in y, form the governing equations for modeling 21 Optical models the partially confined (along the vertical direction y) optical wave propagation along ±z. 67). 67), the envelope function changes only slowly with z and t, which indicates the wave propagation along ±z; its change in x, however, will be determined by the boundary conditions imposed in the x direction, which is normally related to the device lateral structure, and its rate of change may not slow.

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