By F. F. Mazda
A instruction manual and is the reason diversified points of strength electronics, together with the parts, circuits and purposes
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Extra info for Power Electronics Handbook. Components, Circuits and Applications
Sample text
For low values of VCB the current can increase to 7 M , where it is limited by the current-carrying capability of the bonding wire and the metallisation tracks used on the silicon. As VCB increases so also does the power dissipation, so that eventually IC will need to be decreased. For large values of VCE the value of IC is reduced still further in order to prevent the occurrence of second breakdown effects. The SO A of the transistor increases as the duty cycle reduces, since both the dissipation and second breakdown effects are now lower.
There is a series of curves for different base currents and these give rise to individual second breakdown points, which all lie on a locus, as shown. As the duty cycle of the transistor decreases it runs cooler so that it can work on a wider second breakdown locus. 30 Power semiconductor devices Power transistors must be operated in a mode such that second breakdown is avoided. 13(b). Although these curves are for a device rated at a peak current of IM and a voltage of V M , the transistor cannot be run at this current and voltage simultaneously.
Substrate 1 I | . 2 Characteristics and construction Unipolar transistors are majority carrier bulk semiconductors and are free from minority carrier storage times, so they are inherently faster than bipolar devices. They are also voltage controlled so that their gain is much higher. As the temperature in a unipolar transistor increases, the majority carriers decrease, since the bulk resistivity increases, so there is no thermal runaway effect. Several devices can therefore be connected in parallel to increase the current rating, without any sharing components.