VLSI electronics : microstructure science, volume 7 by Norman G. Einspruch

By Norman G. Einspruch

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Gould, and M. J. Plummer, paper presented at the International Conference on Microlithography, Microcircuit Engineering 81 (1981). 33. R. Ward, A. R. Franklin, P. Gould, M. J. Plummer, and I. H. Lewin, SPIE 393 (1983). 34. K. Bartlett, G. Hillis, M. Chen, R. Trutna, and M. Watts, SPIE 393 (1983). 35. P. R. West and B. F. Griffing, SPIE 393 (1983). 36. E. Ong, K. L. Tai, R. G. Vadinsky, and C. T. Kenmerer, SPIE 393 (1983). 37. A. Marsh, SPIE 393 (1983). 38. E. V. Weber, SPIE 393 (1983). 39. E. V.

This new "information age" [1] has given society computational plenty, and semiconductors have been rapidly assimilated into everyday life, from communications and learning aids to business management and personal entertainment. Such pervasiveness has resulted primarily from an exponential growth in circuit integration coupled with a corresponding exponential decrease in the cost per electronic function. This growth rate is expected to continue throughout the 1980s as the transition from LSI to VLSI is completed, and the number of components on a chip is projected to be over 1 million by 1990 [2].

Of the three material contenders assessed—BN, SiC, and BC—boron nitride is judged to be superior. Silicon carbide was rejected because of its 30 Patrick R. Thornton susceptibility to catastrophic and unpredictable mechanical failure. Boron carbide, on the other hand, has unacceptable optical properties. Boron nitride has the necessary chemical inertness and is highly transmissive (an 8% loss for a 4-//m-thick film). The material is made by low-pressure chemical vapor deposition (CVD) using a boron hydride-ammonia mixture.

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