Quantum Electronics in Lasers and Masers: Part 2 by P. G. Eliseev (auth.), Academician D. V. Skobel’tsyn (eds.)

By P. G. Eliseev (auth.), Academician D. V. Skobel’tsyn (eds.)

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Extra info for Quantum Electronics in Lasers and Masers: Part 2

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8) where {j is a small temperature-dependent quantity. The same relation is observed in the case of the "diagonal" tunneling band (see Fig. 9). 8) of course, the quantity £ + = £ is preserved. 01 eV. An example of the evolution of the spontaneous emission spectrum of an epitaxial gallium arsenide diode may be seen in Fig. 12. Here, as well as in Fig. 13, there are marked deViations, to be discussed below, from the dependence j ,... exp(nwp I e~. The dependence liwp (j) for certain diodes of indium phosphide and its solid solutions is illustrated in Fig.

4. Experimental Investigation of the Properties of Diodes in Spontaneous Emission The investigation of the electrical and optical properties of diodes entailed measurements of the following variables: (1) the capacitance C of the diodes and its dependence on the voltage 30 P. G. ELISEEV U applied to the diode; (2) the dependence of the current density j through the p- n junction on the voltages U applies to the diode and Upn applies to the p- n junction; (3) the radiation intensity P of the diodes (in an integrating photometric sphere) and its dependence on j and Upn as well as the external quantum yield 77 ext of the emission; and (4) the spectral distribution of the radiation intensity.

Region. 2°K, which has two roughly linear parts. One of the latter is characterized by [. F::J 9 meV, the other by [. F::J 11 meV. The temperature dependence of [. is shown in Fig. 17. At a low temperature [. is slightly dependent on the temperature, whereas beginning with T F::J 150 K it becomes proportional to T and, while not exactly equal to kT, it is close to that value. 24kT. These results are complemented by Fig. 18, which refers to the same sample. The figure shows the dependence of tiwp on the current at various temperatures.

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